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| ? semiconductor components industries, llc, 2007 december, 2007 - rev. 9 publication order number: mmun2211lt1/d mmun2211lt1 series preferred devices bias resistor transistor npn silicon surface mount transistor with monolithic bias resistor network this new series of digital transistors is designed to replace a single device and its external resistor bias network. the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base\emitter resistor. the brt eliminates these individual components by integrating them into a single device. the use of a brt can reduce both system cost and board space. the device is housed in the sot\23 package which is designed for low power surface mount applications. features ? simplifies circuit design ? reduces board space and component count ? pb-free packages are available maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector\base voltage v cbo 50 vdc collector\emitter voltage v ceo 50 vdc collector current i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d 246 (note 1) 400 (note 2) 1.5 (note 1) 2.0 (note 2) mw c/w thermal resistance, junction\to\ambient r ja 508 (note 1) 311 (note 2) c/w thermal resistance, junction\to\lead r jl 174 (note 1) 208 (note 2) c/w junction and storage temperature range t j , t stg -55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr-4 @ minimum pad 2. fr-4 @ 1.0 x 1.0 inch pad sot-23 case 318 style 6 marking diagram pin 3 collector (output) pin 2 emitter (ground) pin 1 base (input) r1 r2 preferred devices are recommended choices for future use and best overall value. http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 16 of this data sheet. ordering information a8x m 1 a8x = specific device code m = date code = pb-free package (note: microdot may be in either location)
mmun2211lt1 series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector\base cutoff current (v cb = 50 v, i e = 0) i cbo - - 100 nadc collector\emitter cutoff current (v ce = 50 v, i b = 0) i ceo - - 500 nadc emitter\base cutoff current mmun2211lt1, g (v eb = 6.0 v, i c = 0) mmun2212lt1, g mmun2213lt1, g mmun2214lt1, g mmun2215lt1, g mmun2216lt1, g mmun2230lt1, g mmun2231lt1, g mmun2232lt1, g mmun2233lt1, g mmun2234lt1, g mmun2238lt1, g mmun2241lt1, g i ebo - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 4.0 0.1 madc collector\base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 - - vdc collector\emitter breakdown voltage (note 3), (i c = 2.0 ma, i b = 0) v (br)ceo 50 - - vdc on characteristics (note 3) dc current gain mmun2211lt1, g (v ce = 10 v, i c = 5.0 ma) mmun2212lt1, g mmun2213lt1, g mmun2214lt1, g mmun2215lt1, g mmun2216lt1, g mmun2230lt1, g mmun2231lt1, g mmun2232lt1, g mmun2233lt1, g mmun2234lt1, g mmun2238lt1, g mmun2241lt1, g h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 350 350 - - - - - - - - - - - - - collector\emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) mmun2211lt1, g mmun2212lt1, g mmun2213lt1, g mmun2214lt1, g mmun2233lt1, g mmun2234lt1, g (i c = 10 ma, i b = 1 ma) mmun2215lt1, g mmun2216lt1, g mmun2232lt1, g mmun2238lt1, g (i c = 10 ma, i b = 5 ma) mmun2230lt1, g mmun2231lt1, g mmun2241lt1, g v ce(sat) - - - - - - - - - - - - - - - - - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 vdc 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. mmun2211lt1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (note 4) output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) mmun2211lt1, g mmun2212lt1, g mmun2214lt1, g mmun2215lt1, g mmun2216lt1, g mmun2230lt1, g mmun2231lt1, g mmun2232lt1, g mmun2233lt1, g mmun2234lt1, g mmun2238lt1, g (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) mmun2213lt1, g (v cc = 5.0 v, v b = 5.0 v, r l = 1.0 k ) mmun2241lt1, g v ol - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) mmun2211lt1, g mmun2212lt1, g mmun2213lt1, g mmun2214lt1, g mmun2233lt1, g (v cc = 5.0 v, v b = 0.05 v, r l = 1.0 k ) mmun2230lt1, g mmun2234lt1, g (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) mmun2215lt1, g mmun2216lt1, g mmun2231lt1, g mmun2232lt1, g mmun2238lt1, g mmun2241lt1, g v oh 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - - - - - - - - - - - - - - - - - vdc input resistor mmun2211lt1, g mmun2212lt1, g mmun2213lt1, g mmun2214lt1, g mmun2215lt1, g mmun2216lt1, g mmun2230lt1, g mmun2231lt1, g mmun2232lt1, g mmun2233lt1, g mmun2234lt1, g mmun2238lt1, g mmun2241lt1, g r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.88 130 k resistor ratio mmun2211lt1, g mmun2212lt1, g mmun2213lt1, g mmun2214lt1, g mmun2215lt1, g mmun2216lt1, g mmun2230lt1, g mmun2231lt1, g mmun2232lt1, g mmun2233lt1, g mmun2234lt1, g mmun2238lt1, g mmun2241lt1, g r1/r2 0.8 0.8 0.8 0.17 - - 0.8 0.8 0.8 0.055 0.38 - - 1.0 1.0 1.0 0.21 - - 1.0 1.0 1.0 0.1 0.47 - - 1.2 1.2 1.2 0.25 - - 1.2 1.2 1.2 0.185 0.56 - - 4. pulse test: pulse width < 300 s, duty cycle < 2.0%. mmun2211lt1 series http://onsemi.com 4 typical electrical characteristics - mmun2211lt1 100 10 1 0.1 0.01 0.001 0123 4 v in , input voltage (volts) 5678910 v o = 5 v i c, collector current (ma) t a = -25 c 75 c 25 c 1000 100 10 1 10 100 i c , collector current (ma) 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) f = 1 mhz l e = 0 a t a = 25 c v ce = 10 v figure 1. derating curve 250 200 150 100 50 0 -50 0 50 100 150 t a , ambient temperature (5 c) figure 2. v ce(sat) vs. i c p d, power dissipation (milliwatts) c ob, capacitance (pf) h fe, dc current gain (normalized) r ja = 625 c/w t a = 75 c -25 c 25 c 10 02030 i c , collector current (ma) 10 1 0.1 40 50 figure 3. dc current gain v in, input voltage (v) t a = -25 c 75 c 25 c v o = 0.2 v 1 0.1 0.01 0.001 02040608 0 i c , collector current (ma) i c /i b = 10 v ce(sat), maximum collector voltage (v) t a = -25 c 75 c 25 c figure 4. output capcitance figure 5. output current vs. input voltage figure 6. input voltage vs. output current mmun2211lt1 series http://onsemi.com 5 typical electrical characteristics - mmun2212lt1 figure 7. v ce(sat) vs. i c 0.001 0.01 0.1 1 40 i c , collector current (ma) 020 6080 i c /i b = 10 - v ce(sat), maximum collector voltage (v) t a = -25 c 25 c 75 c figure 8. dc current gain 1000 10 i c , collector current (ma ) 100 10 1 100 v ce = 10 v h fe, dc current gain (normalized) t a = 75 c 25 c -25 c c ob, capacitance (pf) figure 9. output capacitance figure 10. output current vs. input voltage 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 0 i c , collector current (ma) 100 10 1 0.1 10 20 30 40 50 figure 11. input voltage vs. output current 50 010203040 4 3 2 1 0 v r , reverse bias voltage (volts) f = 1 mhz l e = 0 a t a = 25 c v o = 5 v v o = 0.2 v i c, collector current (ma) v in, input voltage (v) t a = -25 c 75 c 25 c t a = -25 c 75 c 25 c mmun2211lt1 series http://onsemi.com 6 typical electrical characteristics - mmun2213lt1 v ce(sat), maximum collector voltage (v) figure 12. v ce(sat) vs. i c 0 204060 80 10 1 0.1 0.01 i c , collector current (ma) i c /i b = 10 t a = -25 c 75 c 25 c figure 13. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 v ce = 10 v h fe, dc current gain (normalized) t a = 75 c -25 c 25 c figure 14. output capacitance 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) f = 1 mhz l e = 0 a t a = 25 c c ob, capacitance (pf) 024681 0 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) figure 15. output current vs. input voltage v o = 5 v i c, collector current (ma) t a = -25 c 75 c 25 c t a = -25 c 75 c 25 c 100 10 1 0.1 010 203040 50 i c , collector current (ma) figure 16. input voltage vs. output current v o = 0.2 v v in, input voltage (v) 75 c t a = -25 c 25 c mmun2211lt1 series http://onsemi.com 7 typical electrical characteristics - mmun2214lt1 figure 17. v ce(sat) vs. i c i c , collector current (ma) 0 20 40 60 80 1 0.1 0.01 0.001 i c /i b = 10 t a = -25 c 25 c 75 c v ce(sat), maximum collector voltage (v) figure 18. dc current gain 1 10 100 i c , collector current (ma) v ce = 10 300 250 200 150 100 50 0 2 4 6 8 15 20 40 50 60 70 80 90 h fe, dc current gain (normalized) 25 c t a = 75 c -25 c 4 3.5 3 2.5 2 1.5 1 0.5 0 024681015 20 25 30 35 40 45 50 v r , reverse bias voltage (volts) figure 19. output capacitance f = 1 mhz l e = 0 a t a = 25 c i c, collector current (ma) c ob, capacitance (pf) 100 10 1 0246810 figure 20. output current vs. input voltage v in , input voltage (volts) v o = 5 v t a = -25 c 75 c 25 c 10 1 0.1 01020304050 figure 21. input voltage vs. output current i c , collector current (ma) v o = 0.2 v v in, input voltage (v) t a = -25 c 75 c 25 c mmun2211lt1 series http://onsemi.com 8 typical electrical characteristics - mmun2215lt1 75 c 25 c -25 c figure 22. v ce(sat) versus i c figure 23. dc current gain figure 24. output capacitance figure 25. output current versus input voltage v in , input voltage (volts) figure 26. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = -25 c 75 c 25 c t a = -25 c 75 c 25 c t a = -25 c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mmun2211lt1 series http://onsemi.com 9 typical electrical characteristics ? mmun2216lt1 75 c 25 c -25 c figure 27. v ce(sat) versus i c figure 28. dc current gain figure 29. output capacitance figure 30. output current versus input voltage v in , input voltage (volts) figure 31. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = -25 c 75 c 25 c t a = -25 c 75 c 25 c t a = -25 c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mmun2211lt1 series http://onsemi.com 10 typical electrical characteristics ? mmun2230lt1 75 c 25 c -25 c figure 32. v ce(sat) versus i c figure 33. dc current gain figure 34. output capacitance figure 35. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 36. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = -25 c 75 c 25 c t a = -25 c 75 c 25 c t a = -25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mmun2211lt1 series http://onsemi.com 11 typical electrical characteristics ? mmun2231lt1 75 c 25 c -25 c figure 37. v ce(sat) versus i c figure 38. dc current gain figure 39. output capacitance figure 40. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 41. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = -25 c 75 c 25 c t a = -25 c 75 c 25 c t a = -25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mmun2211lt1 series http://onsemi.com 12 typical electrical characteristics - mmun2232lt1 t a = 75 c i c /i b =10 12 1 0.1 0.001 16 8 420 i c , collector current (ma) v ce(sat), maximum collector voltage (v) 0.01 24 28 -25 c 25 c figure 42. v ce(sat) vs. i c figure 43. dc current gain v ce = 10 v 0 1000 100 25 50 10 100 1 75 i c , collector current (ma) h fe, dc current gain t a = 75 c -25 c 25 c 125 figure 44. output capacitance figure 45. output current vs. input voltage f = 1 mhz i e = 0 a t a = 25 c 0 100 10 246 1 0.1 0.01 8 0 4 3 20 2 1 0 v in, input voltage (volts) v r, reverse bias voltage (volts) i c , collector current (ma) c ob, capacitance (pf) 10 60 50 40 30 5 6 v o = 5 v 75 c t a = -25 c 25 c figure 46. output voltage vs. input current v o = 0.2 v 0 10 10 20 30 1 0.1 i c, collector current (ma) v in, input voltage (v) t a = -25 c 75 c 25 c mmun2211lt1 series http://onsemi.com 13 typical electrical characteristics - mmun2233lt1 75 c t a = -25 c figure 47. v ce(sat) vs. i c 25 c i c /i b = 10 12 1 0.1 0.001 17 7 222 i c , collector current (ma) v ce(sat), maximum collector voltage (v) 0.01 27 32 figure 48. dc current gain v ce = 10 v 1 1000 100 10 1 10 i c , collector current (ma) h fe, dc current gain t a = -25 c 100 75 c 25 c figure 49. output capacitance f = 1 mhz i e = 0 a t a = 25 c 0 0.5 3 20 2 1 0 v r, reverse bias voltage (volts) c ob, capacitance (pf) 10 60 50 40 30 3.5 4 1.5 2.5 figure 50. output current vs. input voltage 0 100 10 28 1 0.1 0.01 46 v in, input voltage (volts) i c , collector current (ma) v o = 5 v t a = -25 c 75 c 25 c figure 51. input voltage vs. output current v o = 0.2 v 0 10 12 18 30 1 0.1 i c, collector current (ma) t a = -25 c 624 75 c 25 c v in, input voltage (v) mmun2211lt1 series http://onsemi.com 14 typical electrical characteristics ? mmun2234lt1 75 c 25 c -25 c figure 52. v ce(sat) versus i c figure 53. dc current gain figure 54. output capacitance figure 55. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 56. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 15 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain c ob , capacitance (pf) i c , collector current (ma) v in , input voltage (volts) 75 c 25 c t a = -25 c 0.01 20 100 tbd tbd tbd 5 i c /i b = 10 v ce = 10 v mmun2211lt1 series http://onsemi.com 15 typical applications for npn brts load +12 v figure 57. level shifter: connects 12 or 24 volt circuits to logic in out v cc isolated load from p or other logic +12 v figure 58. open collector inverter: inverts the input signal figure 59. inexpensive, unregulated current source mmun2211lt1 series http://onsemi.com 16 ordering information device marking r1(k) r2(k) package shipping ? mmun2211lt1 a8a 10 10 sot-23 3000 / tape & reel mmun2211lt1g 10 10 sot-23 (pb-free) mmun2211lt3 10 10 sot-23 10,000 / tape & reel mmun2211lt3g 10 10 sot-23 (pb-free) mmun2112lt1 a8b 22 22 sot-23 3000 / tape & reel mmun2212lt1g 22 22 sot-23 (pb-free) mmun2213lt1 a8c 47 47 sot-23 mmun2213lt1g 47 47 sot-23 (pb-free) mmun2214lt1 a8d 10 47 sot-23 mmun2214lt1g 10 47 sot-23 (pb-free) mmun2215lt1 a8e 10 sot-23 mmun2215lt1g 10 sot-23 (pb-free) mmun2216lt1 a8f 4.7 sot-23 mmun2216lt1g 4.7 sot-23 (pb-free) mmun2230lt1 a8g 1.0 1.0 sot-23 mmun2230lt1g 1.0 1.0 sot-23 (pb-free) mmun2231lt1 a8h 2.2 2.2 sot-23 mmun2231lt1g 2.2 2.2 sot-23 (pb-free) mmun2232lt1 a8j 4.7 4.7 sot-23 mmun2232lt1g 4.7 4.7 sot-23 (pb-free) mmun2233lt1 a8k 4.7 47 sot-23 mmun2233lt1g 4.7 47 sot-23 (pb-free) mmun2234lt1 a8l 22 47 sot-23 mmun2234lt1g 22 47 sot-23 (pb-free) mmun2234lt3 22 47 sot-23 10,000 / tape & reel mmun2234lt3g 22 47 sot-23 (pb-free) mmun2238lt1 a8r 2.2 sot-23 3000 / tape & reel mmun2238lt1g 2.2 sot-23 (pb-free) mmun2241lt1 a8u 100 sot-23 mmun2241lt1g 100 sot-23 (pb-free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. mmun2211lt1 series http://onsemi.com 17 package dimensions sot-23 (to-236) case 318-08 issue an style 6: pin 1. base 2. emitter 3. collector mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318-01 thru -07 and -09 obsolete, new standard 318-08. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmun2211lt1/d publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative |
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